Abstract Thallium bismuth diselenide (TlBiSe2) crystals were grown by an optimized process based on Bridgman technique. The material has been characterized by X-ray powder diffraction. An investigation was done on the influence of temperature on the electrical conductivity and Hall effect. The energy gap as well as the ionization energy was calculated. The electrical conductivity temperature dependence was tested to determine the dominant mechanism of conductivity in a temperature range of 203 K and 338 K. Our outcomes show an n-type semiconducting behaviour due to a degenerate state. The scattering character of the free carriers was defined by determination Hall mobilities, the concentration of carriers, activation energies of donors, the diffusion coefficient, and diffusion length of majority carriers. The performed characterization confirms that the grown TlBiSe2 crystals are narrow gap semiconductors with promising properties for practical application.

中文翻译：

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铊二硒化铋晶体的制备及电学性质

摘要 采用基于 Bridgman 技术的优化工艺生长了二硒化铊铋 (TlBiSe2) 晶体。该材料已通过 X 射线粉末衍射表征。研究了温度对电导率和霍尔效应的影响。计算能隙以及电离能。测试电导率温度依赖性以确定在 203 K 和 338 K 温度范围内的主要导电机制。我们的结果显示出由于简并状态导致的 n 型半导体行为。自由载流子的散射特性由霍尔迁移率、载流子浓度、施主活化能、扩散系数和多数载流子的扩散长度来定义。