Abstract We report a method of growing a diamond layer via chemical vapour deposition (CVD) utilizing a mixture of microdiamond and nanodiamond seeding to give a low effective thermal boundary resistance (TBReff) for heat-spreading applications in high-frequency, high-power electronic devices. CVD diamond was deposited onto thin layers of both GaN and AlN on Si substrates, comparing conventional nanodiamond seeding with a two-step process involving sequential seeding with microdiamond then nanodiamond. Thermal properties were determined using transient thermoreflectance (TTR), and the samples were also analysed with SEM and X-ray tomography. While diamond growth directly onto GaN proved to be unsuccessful due to poor adhesion, films grown on AlN were adherent and robust. The two-step mixed-seeding method gave TBReff values

中文翻译：

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用于 CVD 金刚石在 GaN 和 AlN 上的低热障生长的混合尺寸金刚石晶种

摘要 我们报告了一种通过化学气相沉积 (CVD) 生长金刚石层的方法，该方法利用微金刚石和纳米金刚石晶种的混合物为高频、高功率电子器件中的散热应用提供低有效热边界电阻 (TBReff)。设备。将 CVD 金刚石沉积在 Si 衬底上的 GaN 和 AlN 薄层上，将传统的纳米金刚石晶种与两步工艺进行比较，该工艺包括先用微金刚石然后用纳米金刚石顺序播种。使用瞬态热反射 (TTR) 确定热性能，还使用 ​​SEM 和 X 射线断层扫描仪分析样品。虽然由于附着力差，直接在 GaN 上生长金刚石被证明是不成功的，但在 AlN 上生长的薄膜具有附着力和坚固性。两步混合播种法给出了 TBReff 值