Terahertz (THz) photodetector has attracted great attention from worldwide scientists for its applications in security check, biomedical treatment, and astronomical observation. In the performance evaluation of the THz photodetector, the noise level is one of the critical parameters. The Gallium Arsenide (GaAs) blocked-impurity-band (BIB) detector, which is fabricated from intrinsic GaAs-based photoconductive detectors, reveals an attractive advantage of low dark current value and high signal to noise ratio (SNR). In this work, the epitaxial GaAs BIB detector was fabricated and its noise behavior under various bias was investigated at the temperature of 3.5 K. The measured noise consists of flicker noise (1/f noise), shot noise, thermal noise and measurement noise. The effect of bias and operation temperature (T Ope ) on the noise characteristics of a GaAs-based BIB detector has been studied by numerical simulation for suppressing device noise. According to the simulation, the total noise gradually increases with T Ope , and dominated by the shot noise. Our work may provide useful theoretical support to solve the critical epitaxial growth bottleneck of GaAs BIB detector and improve its performance for the applications of astronomical observation, security check, etc.

中文翻译：

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GaAs基阻塞杂质带(BIB)探测器噪声特性研究

太赫兹（THz）光电探测器因其在安检、生物医学治疗和天文观测等方面的应用而受到世界科学家的极大关注。在太赫兹光电探测器的性能评估中，噪声水平是关键参数之一。砷化镓 (GaAs) 阻挡杂质带 (BIB) 探测器由本征 GaAs 基光电导探测器制成，具有低暗电流值和高信噪比 (SNR) 的诱人优势。在这项工作中，制作了外延 GaAs BIB 探测器，并在 3.5 K 的温度下研究了其在各种偏压下的噪声行为。测量的噪声包括闪烁噪声（1/f 噪声）、散粒噪声、热噪声和测量噪声。为了抑制器件噪声，通过数值模拟研究了偏置和工作温度 (T Ope ) 对基于 GaAs 的 BIB 探测器噪声特性的影响。根据仿真，总噪声随着T Ope 逐渐增加，并且以散粒噪声为主。我们的工作可能为解决GaAs BIB探测器的关键外延生长瓶颈提供有用的理论支持，并提高其在天文观测、安全检查等应用中的性能。