III-nitride wide bandgap semiconductors such as alloys of (Al, Ga, In) N play a vital role in high frequency, power electronics, and opto-nanoelectronics applications. Apart from this recently, wide bandgap semiconductor, β-Ga₂O₃ has attracted the attention of worldwide researchers as an alternative of GaN substrates due to its low-cost processing and wide availability of large scale wafers. Due to its suitable material properties, β-Ga₂O₃ can also be used for high frequency and high power electronics applications. In this paper the quantum transport in AlN/β-Ga₂O₃ based high electron mobility transistor (HEMT) along with the compact model development of GaN-based metal oxide semiconductor (MOS)-HEMT is presented for high frequency and high power electronics. Finally, the modeling and simulations of InGaN based nanowire is developed for solar photovoltaics and opto-nanoelectronics applications.

中文翻译：

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基于GaN和Ga 2 O 3的宽带隙半导体器件，用于新兴的纳米电子学

III型氮化物宽带隙半导体，例如（Al，Ga，In）N的合金，在高频，电力电子和光纳米电子应用中起着至关重要的作用。除了这种最近的宽带隙半导体，β- Ga ₂ O ₃由于其低成本的处理和大规模晶圆的广泛可用性而作为GaN衬底的替代材料吸引了全世界研究人员的关注。由于其合适的材料特性，β- Ga ₂ O ₃也可用于高频和高功率电子应用。本文研究了AlN / β- Ga ₂ O _3中的量子输运提出了一种基于GaN的高电子迁移率晶体管（HEMT），以及基于GaN的金属氧化物半导体（MOS）-HEMT的紧凑模型开发，用于高频和高功率电子产品。最后，针对太阳能光伏和光纳米电子应用开发了基于InGaN的纳米线的建模和仿真。