Relationship between the intermediate phases of the sputtered Zn(O,S) buffer layer and the conduction band offset in Cd-free Cu(In,Ga)Se2 solar cells,CrystEngComm

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Relationship between the intermediate phases of the sputtered Zn(O,S) buffer layer and the conduction band offset in Cd-free Cu(In,Ga)Se2 solar cells
CrystEngComm ( IF 2.6 ) Pub Date : 2020-05-27 , DOI: 10.1039/d0ce00216j
Qian Du _{1,

2,

3,

4,

5} , Boyan Li _{3,

6,

7,

8,

9} , Sihan Shi _{1,

2,

3,

4,

5} , Kaizhi Zhang _{1,

2,

3,

4,

5} , Yunxiang Zhang _{1,

2,

3,

4,

5} , Shiqing Cheng _{1,

2,

3,

4,

5} , Zhiqiang Zhou _{1,

2,

3,

4,

5} , Fangfang Liu _{1,

2,

3,

4,

5} , Shulong Sun _{9,

10,

11} , Yun Sun _{1,

2,

3,

4,

5} , Wei Liu _{1,

2,

3,

4,

5}

Affiliation

The Zn(O,S) layer which is alternative to the conventional CdS buffer layer is an ideal candidate due to its eco-friendly compositions and tunable bandgap. One of the approaches to further optimize the device performance is to investigate the relationship between the impurities and the conduction band offset (CBO) at the heterojunction. The impurity phases in Zn(O,S) with different oxygen fluxes are therefore analyzed and the corresponding Cd-free CIGS solar cells are investigated. We demonstrate that the value of CBO at the interface dominates the device performance in the case of low oxygen fluxes with a few impurities in the buffer layer. On the contrary, the formation of excessive impurities in the Zn(O,S) thin films prepared with high oxygen fluxes leads to the decline of the conversion efficiency of solar cells, even if the current CBO value is appropriate. Consequently, the optimized Cd-free solar cells show a similar photovoltaic performance to traditional CdS/CIGS solar cells. This result may be beneficial for preparation of high quality buffer layers and deeper understanding of the deposition of high efficiency Cd-free chalcopyrite solar cells.

中文翻译：

无镉Cu（In，Ga）Se2太阳能电池中溅射的Zn（O，S）缓冲层的中间相与导带偏移的关系

替代常规CdS缓冲层的Zn（O，S）层由于其生态友好的成分和可调节的带隙而成为理想的候选材料。进一步优化器件性能的方法之一是研究杂质与异质结处的导带偏移（CBO）之间的关系。因此分析了具有不同氧通量的Zn（O，S）中的杂质相，并研究了相应的无Cd CIGS太阳能电池。我们证明，在氧气通量低且缓冲层中有少量杂质的情况下，界面处的CBO值支配了器件性能。相反，在高氧通量制备的Zn（O，S）薄膜中形成过多杂质会导致太阳能电池转换效率下降，即使当前的CBO值合适。因此，优化的无镉太阳能电池显示出与传统CdS / CIGS太阳能电池相似的光伏性能。该结果对于制备高质量缓冲层和更深入地理解高效无镉黄铜矿太阳能电池的沉积可能是有益的。

更新日期：2020-07-06

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