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Processing of BiFeO3 thin films to control their dielectric response
Ferroelectrics ( IF 0.6 ) Pub Date : 2020-05-18 , DOI: 10.1080/00150193.2020.1722884
S. P. Reis 1, 2 , F. E. Freitas 1, 3 , E. B. Araújo 1
Affiliation  

Abstract BiFeO3 (BFO) thin films were studied to control their oxygen-related processing parameters in order to obtain specific electrical characteristics in terms of conductivity and dielectric relaxation. BFO thin films prepared with Fe and Bi excesses and post-annealed in oxygen atmosphere showed higher electrical conductivity and lower conduction activation energies than single phase ones. Distinct parameters indicated different conduction mechanisms in the films, associated with the first ionization of oxygen vacancies in BFO films with Fe and Bi excesses and the second one in single phase films. Higher conductive films show lower relaxation times compared to single phase ones.

中文翻译:

处理 BiFeO3 薄膜以控制其介电响应

摘要 研究了 BiFeO3 (BFO) 薄膜以控制其与氧相关的工艺参数,以获得特定的电导率和介电弛豫特性。用 Fe 和 Bi 过量制备并在氧气氛中后退火的 BFO 薄膜显示出比单相薄膜更高的导电性和更低的传导激活能。不同的参数表明薄膜中不同的导电机制,与 Fe 和 Bi 过量的 BFO 薄膜中氧空位的第一次电离以及单相薄膜中的第二次电离有关。与单相薄膜相比,高导电薄膜显示出更低的弛豫时间。
更新日期:2020-05-18
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