Abstract Ferroelectric domain structure and local switching were studied in LiNbO3 thin films deposited by radio-frequency magnetron sputtering technique on Si (001) substrates in Ar and Ar(60%)+O2(40%) environments. The noticeable difference in surface morphology and ferroelectric domain structure of the investigated films was found. The films sintered in pure Ar environment demonstrated pronounced <0001> texture; nevertheless, neither piezoresponse nor ferroelectric domains were obtained. Films sintered in Ar(60%)+O2(40%) environment possessed the switchable ferroelectric domain structure but disordered grain orientation. The films sintered in Ar after thermal annealing in air preserve <0001> texture and possess self-poled switchable domain structure.

中文翻译：

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射频磁控溅射沉积在 Si(001) 上的 LiNbO3 薄膜的畴结构和局部转换

摘要 研究了在Ar和Ar(60%)+O2(40%)环境下通过射频磁控溅射技术在Si(001)衬底上沉积的LiNbO3薄膜的铁电畴结构和局部转换。发现所研究薄膜的表面形态和铁电畴结构存在显着差异。在纯Ar环境中烧结的薄膜表现出明显的<0001>织构；然而，既没有获得压电响应也没有获得铁电畴。在 Ar(60%)+O2(40%) 环境中烧结的薄膜具有可切换的铁电畴结构但晶粒取向无序。在空气中热退火后在 Ar 中烧结的薄膜保留了 <0001> 织构并具有自极化可切换域结构。