In‐pixel temperature sensor for high‐luminance active matrix micro‐light‐emitting diode display using low‐temperature polycrystalline silicon and oxide thin‐film‐transistors,Journal of the Society for Information Display

当前位置： X-MOL 学术 › J. Soc. Inf. Disp. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

In‐pixel temperature sensor for high‐luminance active matrix micro‐light‐emitting diode display using low‐temperature polycrystalline silicon and oxide thin‐film‐transistors
Journal of the Society for Information Display ( IF 1.7 ) Pub Date : 2020-05-26 , DOI: 10.1002/jsid.915
Yuanfeng Chen ₁ , Suhui Lee ₁ , Hyunho Kim ₁ , Jiseob Lee ₁ , Di Geng ₂ , Jin Jang ₁

Affiliation

We propose an in‐pixel temperature sensor using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistor (TFTs) for high‐luminance active matrix (AM) micro‐light‐emitting diode (LED) displays. By taking advantage of the different off‐current characteristics of p‐type LTPS TFTs and n‐type a‐IGZO TFTs under temperature change, we designed and fabricated a temperature sensor consists of only LTPO TFTs without additional sensing component or material. The fabricated sensor exhibits excellent temperature sensitivity of up to 71.8 mV/°C. In addition, a 64 × 64 temperature sensor array with 3T sensing pixel and integrated gate driver has also been fabricated, which demonstrates potential approach for maxing out the performance of high‐luminance AM micro‐LED display with real‐time in‐pixel temperature monitoring.

中文翻译：

使用低温多晶硅和氧化物薄膜晶体管的高亮度有源矩阵微发光二极管显示器的像素内温度传感器

我们建议使用低温多晶硅和氧化物（LTPO）薄膜晶体管（TFT）的像素内温度传感器用于高亮度有源矩阵（AM）微发光二极管（LED）显示器。通过利用p型LTPS TFT和n型a-IGZO TFT在温度变化下的不同关断电流特性，我们设计和制造了仅由LTPO TFT组成的温度传感器，而没有其他传感组件或材料。制成的传感器具有高达71.8 mV /°C的出色温度灵敏度。此外，还制造了具有3T感测像素和集成栅极驱动器的64×64温度传感器阵列，这演示了通过实时像素内温度监控最大化高亮度AM micro-LED显示器性能的潜在方法。。

更新日期：2020-05-26

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11