Enhanced Brightness and Device Lifetime of Quantum Dot Light‐Emitting Diodes by Atomic Layer Deposition,Advanced Materials Interfaces

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Enhanced Brightness and Device Lifetime of Quantum Dot Light‐Emitting Diodes by Atomic Layer Deposition
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-05-27 , DOI: 10.1002/admi.202000343
Gi‐Hwan Kim ₁ , Kyeongchan Noh ₁ , Jisu Han _{2,

3} , Minsu Kim ₄ , Nuri Oh ₅ , Woongkyu Lee ₆ , Hyon Bin Na ₇ , Chansun Shin ₁ , Tae‐Sik Yoon ₁ , Jaehoon Lim ₂ , Seong‐Yong Cho ₁

Affiliation

Colloidal quantum dot light‐emitting diodes (QD‐LEDs) are one of the future emissive displays, but understanding charge transport mechanism at the interface and improving charge balances in the device are key challenges to the commercialization of QD‐LED. In this study, the ZnO interlayer is introduced by atomic layer deposition (ALD) technique to enhance the performance and lifetime of green‐emitting CdZnSeS/ZnS core/shell QD‐LEDs. Atomic force microscopy images of QD layer reveal that the thin film of ZnO deposited by ALD reduces the root‐mean‐square (RMS) roughness of the QD film to less than 2 nm, even though the average diameter of the individual QDs is about 10.9 nm, which results in the suppression of excess electron transport in QD‐LED devices. The enhanced performance (an improvement of maximum luminescence from 70 000 to 160 000 cd m⁻²) and operational stability (an improvement of operation lifetime from 20 to 61.5 h at 5000 cd m⁻²) of the QD‐LEDs result from the formation of the smoother interface between the QD and electron transport layers, which is indicated by deposition of thicker ALD ZnO or deposition of ALD ZnO after coating the ZnO nanoparticles as an electron transport layer.

中文翻译：

通过原子层沉积提高量子点发光二极管的亮度和设备寿命

胶体量子点发光二极管（QD-LED）是未来的发光显示器之一，但是了解界面上的电荷传输机制和改善设备中的电荷平衡是QD-LED商业化的关键挑战。在这项研究中，通过原子层沉积（ALD）技术引入了ZnO中间层，以提高绿色发射CdZnSeS / ZnS核/壳QD-LED的性能和寿命。QD层的原子力显微镜图像显示，ALD沉积的ZnO薄膜将QD膜的均方根（RMS）粗糙度降低至小于2 nm，即使单个QD的平均直径约为10.9纳米，从而抑制了QD-LED器件中多余的电子传输。增强的性能（最大发光度从70 000 cd m提高到160000 cd mQD-LED的^-2）和操作稳定性（5000 cd m ^-2时的工作寿命从20到61.5 h延长）是由于QD和电子传输层之间形成更光滑的界面而引起的，这通过沉积来表明涂层较厚的ALD ZnO或沉积ZnO纳米颗粒作为电子传输层后沉积ALD ZnO。

更新日期：2020-05-27

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