In this work, n type Cu₅In₉Se₁₆ was prepared using the vertical Bridgman–Stockbarger technique. N type conductivity is confirmed by the Hall effect method and also by the standard test Method for conductivity type of extrinsic semiconducting materials. Our samples are crystallized in a tetragonal phase with a P4mm space group. The optical absorption coefficient has been studied and the value of the optical band gap energy is obtained to be 1.003eV. Electrical impedance spectroscopy data, with frequency varying between 20 Hz and 1 MHz, were performed in the temperature range 100–300 K. By using the modulus formalism, we show that “grain boundary” contribution governs the AC electrical conductivity. The experimental data of Cu₅In₉Se₁₆ are compared with others related to similar compounds of the Cu–In–Se family.

在这项工作中，使用垂直Bridgman–Stockbarger技术制备了n型Cu ₅ In ₉ Se ₁₆。N型导电性通过霍尔效应方法以及非本征半导体材料的导电类型的标准测试方法确定。我们的样品在具有P4mm空间群的四方相中结晶。已经研究了光吸收系数，并且光学带隙能量的值为1.003eV。在100–300 K的温度范围内，进行了频率在20 Hz和1 MHz之间变化的电阻抗光谱数据。通过使用模量形式，我们表明“晶界”贡献控制着AC电导率。Cu ₅ In的实验数据_将9 Se ₁₆与与Cu-In-Se家族的类似化合物相关的其他Se进行了比较。