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Highly oriented crystalline thin film with high electroluminescence performance fabricated by weak epitaxy growth
Organic Electronics ( IF 2.7 ) Pub Date : 2020-05-27 , DOI: 10.1016/j.orgel.2020.105806
Li Liu , Chenglong Li , Zhiqiang Li , Peifu Sun , Feng Zhu , Yue Wang , Donghang Yan

Efficient control on the growth of organic crystalline films is crucial for developing organic electroluminescent devices. Herein, a highly crystalline thin film of a blue-light-emitting material, 1,2-diphenyl-1H-phenanthro[9,10-d]imidazole (PPI) derivative, 1,4-bis(1-phenyl-1H-phenanthro[9,10-d]imidazol-2-yl)benzene (ρ-DPPI), has been achieved by the weak epitaxy growth (WEG) method. The ρ-DPPI molecules with an edge-on orientation grow epitaxially on the inducing layer, forming the continuous and uniform crystalline thin film. The photoluminescence (PL) spectrum of the ρ-DPPI thin film fabricated by weak epitaxy growth was blue-shifted relative to that of the amorphous ρ-DPPI thin film. Also, its PL quantum yield was measured and found to be 64.5%. The electroluminescence performance was evaluated and a fluorescent OLED that emits deep-blue light with Commission Internationale de L'Eclairage (CIE) coordinates of (0.15, 0.11) has been achieved. The device exhibits high performance with a maximum current efficiency, power efficiency and external quantum efficiency of 4.5 cd A−1, 4.1 lm W−1 and 4.1% at 200 cd m−2, which demonstrates its potential as a highly efficient emitter. The further adoption of the WEG method would advance the knowledge of the growth behavior of luminescent materials and provide desired properties for their electroluminescent applications.



中文翻译:

通过弱外延生长制造的具有高电致发光性能的高取向晶体薄膜

有效控制有机晶体膜的生长对于开发有机电致发光器件至关重要。在此,蓝色发光材料的高结晶性薄膜是1,2-二苯基-1H-菲并[9,10-d]咪唑(PPI)衍生物,1,4-双(1-苯基-1H-菲咯[9,10-d]咪唑-2-基)苯(ρ- DPPI)已通过弱外延生长(WEG)方法实现。具有边沿取向的ρ- DPPI分子在诱导层上外延生长,形成连续且均匀的晶体薄膜。通过弱外延生长制造的ρ- DPPI薄膜的光致发光(PL)光谱相对于非晶ρ的光谱发生了蓝移-DPPI薄膜。另外,测量其PL量子产率,发现为64.5%。评估了电致发光性能,并且获得了发出深蓝色光的荧光OLED,其国际照明委员会(CIE)坐标为(0.15,0.11)。该器件具有高性能与最大电流效率,功率效率和4.5光盘的外部量子效率-1,4.1流明w ^ -1和以200cd米4.1%-2,这表明其潜在的作为高效发射极。WEG方法的进一步采用将增进对发光材料生长行为的了解,并为其电致发光应用提供所需的性能。

更新日期:2020-05-27
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