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Fabrication stacking faults and its influence on the delamination behavior of SuperPower (SCS4050®) tapes
Engineering Failure Analysis ( IF 4.4 ) Pub Date : 2020-05-27 , DOI: 10.1016/j.engfailanal.2020.104609
Stephen Ogbonna Mbam , Xiao-Fan Gou

In this study, the authors investigated the evolution of the stacking faults (local defects) during film deposition and its influence on the delamination behavior (mechanisms) of SuperPower (SCS4050®) tapes using the DEM approach. The DEM approach was developed explicitly for the characterization of the evolution of the local defect in multilayered film structures. According to the study, major local defects in a multilayered film structure emerge from interlayer interactions as a function of temperature and time during the deposition of films unto the substrate. The interlayer interactions include the thermal coefficient of expansion mismatch and different eigenstates of layers in the tape. Also, the influence of the major film deposition methods (chemical and physical vapor deposition methods) on the evolution of the stacking faults in the tape was investigated. Under the given parameters, the results showed that the most vulnerable to the evolution of the local defects in the SuperPower (SCS4050®) tapes are the yttrium barium copper oxide (YBCO) interfaces and silver (Ag) layer. A comparison of the computed loss of bonding energy in the tape shows that, if a delamination test is carried out on the tape, above 80% of the delamination would occur around YBCO interfaces. Also, according to the stacking faults distribution with different film deposition method, it is practicable to minimize or localize stacking faults to a particular region of the tape. According to this study and previous studies, the computed results on the DEM approach are consistent with those on several valuable experiments and models in the literature.



中文翻译:

加工堆叠故障及其对SuperPower(SCS4050®)胶带分层行为的影响

在这项研究中,作者使用DEM方法研究了薄膜沉积过程中堆叠缺陷(局部缺陷)的演变及其对SuperPower(SCS4050®)胶带的分层行为(机理)的影响。DEM方法已明确开发,用于表征多层膜结构中局部缺陷的演变。根据这项研究,多层膜结构中的主要局部缺陷是由层间相互作用引起的,该层间相互作用是将膜沉积到基板上时温度和时间的函数。层间相互作用包括带的热膨胀系数不匹配和层的不同本征态。也,研究了主要的薄膜沉积方法(化学和物理气相沉积方法)对磁带中堆垛层错演变的影响。在给定的参数下,结果表明,最容易遭受SuperPower(SCS4050®)胶带局部缺陷演变的是钇钡氧化铜(YBCO)界面和银(Ag)层。胶带中计算的键合能量损失的比较表明,如果对胶带进行分层测试,则YBCO界面周围将发生80%以上的分层。而且,根据具有不同膜沉积方法的堆叠缺陷分布,将堆叠缺陷最小化或定位到带的特定区域是可行的。根据这项研究和以前的研究,

更新日期:2020-05-27
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