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TCAD silicon device simulation for high level of radiation damage
Journal of Instrumentation ( IF 1.3 ) Pub Date : 2020-05-25 , DOI: 10.1088/1748-0221/15/05/c05066
N. Agrawal 1 , K. Androsov 2 , A. Bhardwaj 1 , M.A. Ciocci 2 , M.T. Grippo 2 , C. Jain 1 , A. Kumar 1 , A. Messineo 2 , S. Parolia 2 , K. Ranjan 1 , S. Saumya 1 , A. Sisodia 1 , S. Sondh 1
Affiliation  

Silicon detectors are expected to experience an unprecedented radiation flux in the future upgrades of the detectors at the Large Hadron Collider (LHC). The challenging radiation environment of these experiments will severely affect the performance of such detectors, degrading their detection capabilities and imposing severe operational conditions. The modeling of the detectors through Monte Carlo simulation represents a necessary step for the detailed understanding of the silicon detector performance before and after radiation damage; also for setting up optimized design rules aiming to mitigate the detrimental effect of the radiation damage. In the present work, a comparison of simulation results, obtained from- Technology Computer-Aided Design (TCAD) simulation software: Silvaco and Synopsys- used to predict silicon detectors performance, is presented. The effects of radiation damage are incorporated in the TCADs, using an effective multiple traps model. A systematic study of ...

中文翻译:

TCAD硅器件仿真可实现高水平的辐射损伤

在大型强子对撞机(LHC)的升级中,硅探测器有望获得前所未有的辐射通量。这些实验具有挑战性的辐射环境将严重影响此类检测器的性能,降低其检测能力并施加严酷的操作条件。通过蒙特卡洛模拟对探测器进行建模代表了详细了解辐射损坏之前和之后的硅探测器性能的必要步骤。还用于建立旨在减轻辐射损伤的不利影响的优化设计规则。在目前的工作中,从技术计算机辅助设计(TCAD)仿真软件:Silvaco和Synopsys-用来预测硅探测器的性能,被呈现。使用有效的多陷阱模型,将辐射损伤的影响纳入TCAD中。对...的系统研究
更新日期:2020-05-25
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