We demonstrate controlled chemical vapor deposition growth of lateral and vertical heterostructures of graphene and hexagonal boron nitride (h-BN) on Cu substrates by changing supply sequence of their precursors. When the graphene precursors are switched by the h-BN precursors, h-BN grows from the edges of the existing graphene islands, resulting in the lateral heterostrcutures. In the reversed supply sequence, on the other hand, graphene grows at the interface between the h-BN and Cu substrate, leading to the vertical heterostructures. This simple method of controlling vertical and lateral heterostructures allows to produce more complicated heterostructures by designing the precursor supply sequence.

中文翻译：

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侧向和垂直石墨烯/ h-BN异质结构的CVD生长受控

我们通过改变前体的供应顺序，证明了在铜基板上石墨烯和六方氮化硼（h-BN）的横向和垂直异质结构的受控化学气相沉积生长。当石墨烯前体被h-BN前体转换时，h-BN从现有石墨烯岛的边缘生长，从而导致横向异质结构。另一方面，在相反的供应顺序中，石墨烯在h-BN和Cu衬底之间的界面处生长，导致垂直异质结构。控制垂直和横向异质结构的这种简单方法允许通过设计前体供应顺序来产生更复杂的异质结构。