We present a simple but accurate 1-D methodology of modeling for AlGaN/GaN High Electron Mobility Transistors (HEMTs), and by which means study its Reduced Surface Field (RESURF) effect. By using the Effective Concentration Profile Concept, the proposed methodology accounts the interactions between each layer and electric field crowding induced by gate/drain electrodes simultaneously without introducing any simulation results and correction factors. The proposed model indicates that same as that in silicon-based lateral power devices, the RESURF effect is also present in AlGaN/GaN HEMTs. Thus, the channel layer doping of AlGaN/GaN HEMTs plays a leading role in determining the devices’ off-state characteristics. Owing to the veracity and simplicity of the proposed model, in this paper, the devices’ breakdown voltage and RESURF criterion are analytically obtained via a 1-D approach for the first time. The good agreements between the analytical model, experimental results, and 2-D simulations verify the validity of the proposed methodology.

中文翻译：

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AlGaN/GaN HEMT 中的 RESURF 原理：通过有效浓度分布对断态雪崩击穿行为进行精确的一维建模

我们提出了一种简单但准确的一维方法来模拟 AlGaN/GaN 高电子迁移率晶体管 (HEMT)，并通过这种方法研究其减小的表面场 (RESURF) 效应。通过使用有效浓度分布概念，所提出的方法在不引入任何模拟结果和校正因子的情况下同时考虑了每一层与由栅/漏电极引起的电场拥挤之间的相互作用。所提出的模型表明，与硅基横向功率器件相同，RESURF 效应也存在于 AlGaN/GaN HEMT 中。因此，AlGaN/GaN HEMT 的沟道层掺杂在决定器件的断态特性方面起着主导作用。由于所提出模型的准确性和简单性，在本文中，器件的击穿电压和 RESURF 标准是首次通过一维方法分析获得。分析模型、实验结果和二维模拟之间的良好一致性验证了所提出方法的有效性。