Active matrix QD‐LED with top emission structure by UV lithography for RGB patterning,Journal of the Society for Information Display

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Active matrix QD‐LED with top emission structure by UV lithography for RGB patterning
Journal of the Society for Information Display ( IF 1.7 ) Pub Date : 2020-05-25 , DOI: 10.1002/jsid.910
Yohei Nakanishi ₁ , Tomohiro Takeshita ₁ , Yang Qu ₁ , Hiroki Imabayashi ₁ , Shota Okamoto ₁ , Hisayuki Utsumi ₁ , Masayuki Kanehiro ₁ , Enrico Angioni ₂ , Edward A. Boardman ₂ , Iain Hamilton ₂ , Andrea Zampetti ₂ , Valerie Berryman‐Bousquet ₂ , Tim M. Smeeton ₂ , Takeshi Ishida ₁

Affiliation

We have developed full colour top emitting quantum dot light‐emitting diode (QD‐LED) display driven by a 176‐ppi active matrix of metal oxide thin‐film transistors. Red, green and blue (RGB) QD‐LED subpixel emission layers are patterned by our original UV photolithography process and materials. We also demonstrate the potential to achieve high resolution such as 528 ppi using this process.

中文翻译：

有源矩阵QD-LED具有顶部发射结构，通过UV光刻技术进行RGB图案化

我们开发了由176ppi的金属氧化物薄膜晶体管有源矩阵驱动的全色顶部发射量子点发光二极管（QD-LED）显示器。红色，绿色和蓝色（RGB）QD‐LED子像素发射层通过我们原始的UV光刻工艺和材料进行图案化。我们还展示了使用此过程获得528 ppi等高分辨率的潜力。

更新日期：2020-05-25

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