Abstract Selective–area growth of cubic GaN (c–GaN) layers grown on stripe–patterned GaAs (100) substrates by metalorganic vapor phase epitaxy was investigated. The formation of hexagonal phase was examined along with the growth morphology and the lateral-to-vertical growth ratio of the selective–area grown c–GaN stripes. It is found that the hexagonal phase formation significantly depends on growth parameters, particularly, the growth temperature, direction of the stripe pattern, and fill factor. For the [011]– and [0 1 ¯ 1]–stripe patterns, the volume fraction of the hexagonal phase in the c–GaN layers reduces significantly with increasing fill factor. In contrast, it gradually increases with the fill factor for the [001]–stripe pattern. GaN layers with the highest phase purity containing > 85% of the cubic phase can be obtained at low growth temperatures ( ∼ 900°C) for the [011]–stripe pattern with the smallest fill factor of 0.35. A lower lateral growth rate is observed as compared to that at higher growth temperatures (930–960°C). Further evidence is provided by correlating the cathodoluminescence and photoluminescence to the growth facets. Transmission electron microscopy results confirms that h–GaN is easily constructed on the (111)B facet due to the formation of stacking faults. In practice, the [0 1 ¯ 1]–stripe pattern with a large fill factor of ∼ 0.7 can be applied to obtain a selective–area grown c–GaN layer with the highest cubic-phase purity. Furthermore, the [011]–stripe pattern has also been considered for SAG of c–GaN at low growth temperature.

中文翻译：

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金属有机气相外延生长立方 GaN 的选择性区域生长和表征

摘要 研究了通过金属有机气相外延在条纹图案 GaAs (100) 衬底上生长的立方 GaN (c-GaN) 层的选择性区域生长。检查六方相的形成以及选择性区域生长的 c-GaN 条带的生长形态和横向与垂直生长比。发现六边形相的形成显着取决于生长参数，特别是生长温度、条纹图案的方向和填充因子。对于[011]-和[0 1 ¯ 1]-条纹图案，c-GaN 层中六方相的体积分数随着填充因子的增加而显着降低。相反，它随着 [001] 条纹图案的填充因子逐渐增加。具有最高相纯度的 GaN 层含有 > 对于具有最小填充因子 0.35 的 [011]-条纹图案，可以在低生长温度（~900°C）下获得 85% 的立方相。与较高的生长温度（930-960°C）相比，观察到较低的横向生长速率。通过将阴极发光和光致发光与生长面相关联，提供了进一步的证据。透射电子显微镜结果证实，由于形成堆垛层错，h-GaN 很容易在 (111)B 面上构建。在实践中，[0 1 ¯ 1]-条纹图案具有约 0.7 的大填充因子，可用于获得具有最高立方相纯度的选择性区域生长 c-GaN 层。此外，在低生长温度下 c-GaN 的 SAG 也考虑了 [011]-条纹图案。