Abstract Epitaxial MgO (100) films have been grown on GaAs (100) by evaporation of Mg in the presence of 5 × 10−6 Torr of oxygen. Prior to the growth of MgO, the GaAs (100) substrate was cleaned by Ar ion sputtering and annealing. MgO (100) on GaAs (100) was in situ characterized with Auger electron spectroscopy (AES), and ex situ by scanning electron microscopy (SEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and energy–dispersive X–ray spectroscopy (EDX). X-ray diffraction patterns indicated that the MgO film has grown predominantly in the cubic phase with the (100) plane parallel to the GaAs (100) substrate. HRTEM results have confirmed the epitaxial growth of MgO with MgO (100)[001]║ GaAs (100)[001]. Despite the high lattice misfit, the epitaxial MgO (100) is grown on GaAs (100) due to the 4: 3 relationship (4 aMgO: 3 aGaAs) between MgO (100) and GaAs (100). The formation of a 4:3 superstructure reduces the lateral misfit between MgO (100) and GaAs (100) to ≈0.65%. To test the potential of MgO as a protection layer for III-V semiconductor based photo-electro catalytic devices for water splitting in alkaline media the reaction of MgO films with H2O and NaOH was investigated. Flake-like Mg(OH)2 structures appear to have formed on top of the MgO films treated with NaOH.

中文翻译：

---

GaAs (100) 上外延 MgO (100) 的生长、表征和稳定性测试

摘要 在 5 × 10-6 Torr 的氧存在下，通过蒸发 Mg 在 GaAs (100) 上生长外延 MgO (100) 薄膜。在生长 MgO 之前，通过 Ar 离子溅射和退火清洁 GaAs (100) 衬底。GaAs (100) 上的 MgO (100) 使用俄歇电子能谱 (AES) 进行原位表征，并通过扫描电子显微镜 (SEM)、X 射线衍射 (XRD)、高分辨率透射电子显微镜 (HRTEM) 进行异位表征，和能量色散 X 射线光谱 (EDX)。X 射线衍射图表明，MgO 膜主要在立方相中生长，（100）面平行于 GaAs（100）衬底。HRTEM 结果证实了 MgO 与 MgO (100)[001]║ GaAs (100)[001] 的外延生长。尽管存在高晶格失配，外延 MgO (100) 仍生长在 GaAs (100) 上，原因如下 4：图 3 MgO (100) 和 GaAs (100) 之间的关系 (4 aMgO: 3 aGaAs)。4:3 上层结构的形成将 MgO (100) 和 GaAs (100) 之间的横向错配降低到 ≈0.65%。为了测试 MgO 作为基于 III-V 族半导体的光电催化装置在碱性介质中分解水的保护层的潜力，研究了 MgO 薄膜与 H2O 和 NaOH 的反应。片状 Mg(OH)2 结构似乎已形成在用 NaOH 处理的 MgO 膜的顶部。为了测试 MgO 作为基于 III-V 半导体的光电催化装置在碱性介质中分解水的保护层的潜力，研究了 MgO 薄膜与 H2O 和 NaOH 的反应。片状 Mg(OH)2 结构似乎已形成在用 NaOH 处理的 MgO 膜的顶部。为了测试 MgO 作为基于 III-V 族半导体的光电催化装置在碱性介质中分解水的保护层的潜力，研究了 MgO 薄膜与 H2O 和 NaOH 的反应。片状 Mg(OH)2 结构似乎已形成在用 NaOH 处理的 MgO 膜的顶部。