It is especially important to study on the change of 4H-SiC physical properties by swift heavy ion irradiation (SHI) for the future application of SiC devices in extreme irradiation environment. Herein, 4H-SiC Schottky barrier diodes (SBDs) are irradiated by 1.9 GeV ²⁰⁹Bi ion beams without intentional heating. The cross-sectional Micro-Raman Spectroscopy (MRS) results clearly indicated that there are new vibration bands at low fluence. This is attributed to the formation of homonuclear bonds Si–Si and C–C within the SiC network to break down the Raman selection rules. At high fluence, there are only typical Raman data for 4H-SiC crystal and the disappearance of Si–Si and C–C bonds. In addition, it is observed that the interfacial structure is modified due to the silicon and carbon atomic migration during SHI process at the metal-semiconductor interface, and then reacting at high temperature annealing treatment. Furthermore, these results suggest that the evolution of recrystallization effect is varied with irradiation fluence by the cross-sectional MRS.

研究快速重离子辐照（SHI）对4H-SiC物理性能的变化对于SiC器件在极端辐照环境中的未来应用尤为重要。在此，用1.9 GeV ²⁰⁹辐照4H-SiC肖特基势垒二极管（SBD）。双离子束，无意加热。横截面显微拉曼光谱（MRS）结果清楚地表明，在低通量下会出现新的振动带。这归因于在SiC网络内形成同核键Si–Si和C–C以破坏拉曼选择规则。在高通量下，只有典型的4H-SiC晶体拉曼数据以及Si-Si和C-C键的消失。另外，观察到在SHI-过程中在金属-半导体界面处，由于硅和碳原子迁移，界面结构被改性，然后在高温退火处理下反应。此外，这些结果表明，通过横截面MRS，重结晶作用的发展随辐照通量而变化。