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Morphological and structural transformations of indium oxide nanostructures in ammonia growth ambient by atmospheric chemical vapor deposition
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.mssp.2020.105195
T.M. Aper , F.K. Yam , Beh Khi Poay , P.R. Jubu

Abstract In this paper, we present a comparative study of the growth of indium oxide (In2O3) nanostructures on glass substrates by the atmospheric chemical vapor deposition (ACVD) technique in the presence of inert nitrogen and nitrogen/ammonia mixed ambient. Significant differences of the morphological, structural and optical characteristics for the two sets of samples could be observed. The deposited films were examined using FESEM, XRD and UV–vis spectrophotometry respectively. The introduction of ammonia gas in the growth ambient greatly influenced the surface morphology of the produced films, resulting in the formation of structures with well-defined shape as compared to those grown under inert nitrogen environment. XRD analysis show that the change in growth ambient and increase in deposition time have significant effects on the crystal orientation, as crystallite preferential orientation was observed to change from the (400) to (222) plane and vice versa with changes in the growth conditions. Results of the optical analysis show that the prepared films exhibited maximum optical transparency of 65% in the visible region with the optical band gap values ranging from 2.92 to 3.47 eV.

中文翻译:

大气化学气相沉积法在氨生长环境中氧化铟纳米结构的形态和结构转变

摘要 在本文中,我们比较研究了在惰性氮和氮/氨混合环境中,通过大气化学气相沉积 (ACVD) 技术在玻璃基板上生长氧化铟 (In2O3) 纳米结构。可以观察到两组样品的形态、结构和光学特性的显着差异。分别使用FESEM,XRD和UV-vis分光光度法检查沉积的薄膜。在生长环境中引入氨气极大地影响了所生产薄膜的表面形态,与在惰性氮环境下生长的结构相比,形成了具有明确形状的结构。XRD 分析表明,生长环境的变化和沉积时间的增加对晶体取向有显着影响,因为观察到微晶优先取向随着生长条件的变化从(400)面变为(222)面,反之亦然。光学分析结果表明,制备的薄膜在可见光区的最大光学透明度为 65%,光学带隙值为 2.92 至 3.47 eV。
更新日期:2020-11-01
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