We report on growing the p-Ge:Ga/Si(0 0 1) epitaxial layers by hot wire chemical vapor deposition using a solid Ge:Ga sublimation source of Ga. The Ge:Ga layers grown using this doping method were featured by a high crystal quality and full electrical activation of the Ga impurity. The results of the present study demonstrate the prospects of application of the sublimation Ga source for growing the Ge:Ga layers in the Ge/Si(0 0 1) device structures for Si-based electronics and photonics.

中文翻译：

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通过热线化学气相沉积在硅衬底上生长的掺杂镓的锗外延层

我们报告了使用Ga的固体Ge：Ga升华源通过热丝化学气相沉积法生长p -Ge：Ga / Si（0 0 1）外延层。使用这种掺杂方法生长的Ge：Ga层的特征在于a高质量的晶体和Ga杂质的完全电活化。本研究的结果证明了升华Ga源在用于Si基电子和光子学的Ge / Si（0 0 1）器件结构中生长Ge：Ga层的应用前景。