A p‐i‐p‐i‐n front‐illuminated Al_0.4Ga_0.6N‐based separate absorption and multiplication solar‐blind ultraviolet avalanche photodetector is proposed to enhance the optoelectronic performances by modulating polarization electric field based on physical simulations. By modulating the p‐Al_xGa_1−xN interlayer with low Al content, the direction of the polarization electric field could be achieved the same as that of the reverse bias in the multiplication region. The calculated results demonstrate that the designed avalanche photodetectors with a low Al‐content p‐Al_xGa_1−xN layer would significantly reduce the breakdown voltage and enhance the optical gain compared to the conventional counterpart. The effect of modulated polarization electric field on the noise characteristics for the APDs with p‐Al_xGa_1−xN interlayers is investigated. Moreover, the physical mechanism of the enhanced performances for the APDs with modulated polarization field is explored by the electric field distributions and energy band profiles.

中文翻译：

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具有调制极化电场的基于AlGaN的pi-i-n太阳盲紫外雪崩光电探测器

提出了一种基于物理模拟的基于p _0.4的前照式Al _0.4 Ga _0.6 N的独立吸收和倍增太阳盲紫外雪崩光电探测器，以通过调制极化电场来增强光电性能。通过调制具有低Al含量的p -Al _x Ga _{1- x} N中间层，可以实现极化电场的方向与乘法区域中反向偏压的方向相同。计算结果表明，设计的低雪崩光探测器具有低的Al含量p -Al _x Ga _{1- x}与常规的对应层相比，N层将显着降低击穿电压并提高光学增益。研究了极化极化电场对具有p -Al _x Ga _{1- x} N中间层的APD的噪声特性的影响。此外，通过电场分布和能带分布图探讨了极化场调制后的APD性能增强的物理机制。