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Ion composition of a multicomponent beam plasma formed by electron‐beam evaporation of a boron‐containing target in medium vacuum
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2020-05-25 , DOI: 10.1002/ppap.202000057
Yury G. Yushkov 1, 2 , Efim M. Oks 1, 2 , Andrey V. Tyunkov 1, 2 , Denis B. Zolotukhin 2
Affiliation  

Thin boron and boron nitride films are applied in microelectronics due to their high hardness and strength, and low electrical conductivity. However, methods for fabrication of such films are limited. One promising method is electron‐beam evaporation of a boron‐containing target to form a boron‐containing plasma. In this study, we describe our investigations of the ion mass‐to‐charge composition of the multicomponent plasma generated by heating and evaporation of boron or boron nitride targets by a continuous electron beam in a helium or nitrogen atmosphere at medium vacuum pressure (about 10 Pa). We show that at beam power sufficient for intense evaporation of the boron target, there is an increase in the mass fraction of boron ions in the plasma. For the case of evaporation of a boron nitride target, the deposited coating contains both boron and nitrogen, implying incomplete dissociation of boron nitride molecules in the evaporation process. The results of our study demonstrate the utility of electron‐beam evaporation of high melting point binary compounds in medium vacuum for coating deposition.

中文翻译:

在中等真空下通过电子束蒸发含硼靶形成的多组分束等离子体的离子组成

硼和氮化硼薄膜由于其高硬度和强度以及低电导率而被应用于微电子领域。但是,制造这种膜的方法受到限制。一种有前途的方法是将含硼靶标进行电子束蒸发以形成含硼等离子体。在这项研究中,我们描述了对在中真空压力下(约10℃)在氦或氮气氛中通过连续电子束加热和蒸发硼或氮化硼靶材而产生的多组分等离子体的离子质荷组成的研究。 Pa)。我们表明,在足以使硼靶强烈蒸发的束功率下,等离子体中硼离子的质量分数增加。对于蒸发氮化硼靶的情况,沉积的涂层同时包含硼和氮,这意味着氮化硼分子在蒸发过程中不完全解离。我们的研究结果证明了在中等真空度下高熔点二元化合物电子束蒸发在涂层沉积中的应用。
更新日期:2020-05-25
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