One‐Step Fabrication of Perovskite‐Based Upconversion Devices,ChemPhotoChem

当前位置： X-MOL 学术 › ChemPhotoChem › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

One‐Step Fabrication of Perovskite‐Based Upconversion Devices
ChemPhotoChem ( IF 3.0 ) Pub Date : 2020-05-25 , DOI: 10.1002/cptc.202000068
Sarah Wieghold ₁ , Alexander S. Bieber ₁ , Jens Lackner ₂ , Karin Nienhaus ₂ , G. Ulrich Nienhaus _{2,

3,

4,

5} , Lea Nienhaus ₁

Affiliation

Device fabrication methods for applications in upconversion processes using perovskite thin films have suffered from reproducibility and scalability issues, which prevent the upscaling of this technology. In this contribution, we developed a perovskite‐based upconversion device approach where the triplet annihilator is added in situ to the antisolvent and investigated the effect of the device fabrication procedure on the properties of our device. By comparing the properties of a device based on our new fabrication approach with the existing bilayer procedure, we seek to shed light on the underlying optoelectronic processes influenced by the different fabrication methods, while further advancing possible device architectures for upconversion devices. Device characterization by optical methods, X‐ray diffraction and atomic force microscopy revealed that the in situ fabricated devices match the performance or even outcompete our previously developed bilayer devices while significantly simplifying the device fabrication. In particular, we find that the developed one‐step fabrication technique enables intercalation of the upconverting layer into the perovskite film prior to annealing, resulting in a larger interface thus, more efficient charge extraction.

中文翻译：

钙钛矿基上转换器件的一步制造

用于使用钙钛矿薄膜的上转换过程中的应用的器件制造方法遭受可再现性和可扩展性问题，这阻止了该技术的规模化。在这项贡献中，我们开发了一种基于钙钛矿的上转换装置方法，其中就地添加了三重态an灭器并研究了器件制造过程对我们器件性能的影响。通过将基于我们的新制造方法的器件的性能与现有的双层工艺进行比较，我们试图揭示受不同制造方法影响的基础光电工艺，同时进一步推进上变频器件的器件架构。通过光学方法，X射线衍射和原子力显微镜对设备进行表征，结果表明该设备是原位的制成的器件在性能上达到甚至超过我们先前开发的双层器件，同时大大简化了器件的制造。特别是，我们发现，开发的一步制造技术能够在退火之前将上转换层插入钙钛矿膜中，从而产生更大的界面，从而更有效地提取电荷。

更新日期：2020-05-25

点击分享查看原文

点击收藏

阅读更多本刊最新论文