Probing Coulomb Interactions on Charge Transport in Few‐Layer Organic Crystalline Semiconductors by the Gated van der Pauw Method,Advanced Electronic Materials

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Probing Coulomb Interactions on Charge Transport in Few‐Layer Organic Crystalline Semiconductors by the Gated van der Pauw Method
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-05-25 , DOI: 10.1002/aelm.202000136
Sai Jiang ₁ , Jun Qian ₁ , Qijing Wang ₁ , Yiwei Duan ₁ , Jianhang Guo ₁ , Bowen Zhang ₁ , Huabin Sun ₂ , Xinran Wang ₁ , Chuan Liu ₃ , Yi Shi ₁ , Yun Li ₁

Affiliation

A general understanding of the nature of the charge motions at the organic/dielectric interface requires an accurate examination on the influence from the Coulomb interactions among carriers. However, difficulties on this substantial issue are due to complicated interpretation and extraction of the intrinsic electrical parameters for the organic films. Here, the carrier transport in highly ordered, few‐layer organic crystalline semiconductors is studied by a geometry‐independent gated van der Pauw method, confining the charge carrier distribution at the precision of molecular layers and minimizing the effects of extrinsic factors. The characteristics of carrier transport are varied in different film layers and show nonideal features. The Fröhlich polaron model well explains the features and suggests that the Coulomb interactions among carriers should be considered at a high carrier density, which is manifested by the characteristic parameter 〈ξ 〉/2 measuring the extra potential for polaron transport. This understanding of the physical process between Coulomb interactions and polaron transport in organic crystalline semiconductors can enable promising strategies for achieving more ideal transistor performance and new device physics.

中文翻译：

用门控范德堡方法研究几层有机晶体半导体中电荷输运的库仑相互作用

对有机/介电界面上电荷运动性质的一般理解要求对载流子之间库仑相互作用的影响进行准确检查。然而，由于有机膜的固有电参数的复杂解释和提取，在这个实质性问题上的困难。在此，通过与几何无关的门控范德堡方法研究了高度有序的，很少层有机晶体半导体中的载流子传输，将电荷载流子分布限制在分子层的精度范围内，并最小化了外在因素的影响。载流子传输的特性在不同的薄膜层中是不同的，并且显示出不理想的特征。Fröhlich极化子模型很好地解释了这些特征，并建议在高载流子密度下考虑载流子之间的库仑相互作用，这可以通过测量极化子传输的额外电势的特征参数〈ξ〉 / 2来体现。对有机晶体半导体中库仑相互作用和极化子传输之间的物理过程的这种理解可以为实现更理想的晶体管性能和新器件物理特性提供有前途的策略。

更新日期：2020-07-13

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