Abstract A low-temperature scanning tunnelling microscope (STM) has been used to study the graphene-SiC(0001) interface before and after Li intercalation. For clean graphene, spectroscopy of the differential conductance corroborates previous theoretical findings for the interfacial electronic structure (M. Kajihara et al., Surf. Sci. 647, 39 (2016)). An unambiguous relation between the spectroscopic onset of the interface states with changes in STM images is presented. Li intercalation leads to the disappearance of the 6 × 6 superstructure of clean graphene on SiC(0001) and efficiently suppresses the interface states. The additional doping of graphene due to the presence of Li is reflected by the shift of the Dirac point further below the Fermi energy.

中文翻译：

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SiC(0001)上干净且嵌锂的石墨烯的结构和局部电子特性

摘要 低温扫描隧道显微镜 (STM) 已被用于研究锂嵌入前后的石墨烯-SiC(0001) 界面。对于清洁石墨烯，微分电导的光谱证实了之前对界面电子结构的理论发现（M. Kajihara 等，Surf. Sci. 647, 39 (2016)）。呈现了界面态的光谱起始与 STM 图像变化之间的明确关系。Li 嵌入导致 SiC(0001) 上清洁石墨烯的 6 × 6 超结构消失并有效抑制界面态。由于 Li 的存在，石墨烯的额外掺杂通过狄拉克点进一步低于费米能量的位移反映出来。