This paper focused on the growth of zinc oxide nanowires on unannealed and annealed indium tin oxide-coated-coated glass substrates on the structural, optical, and electrical properties towards surface acoustic wave (SAW) piezoelectric nanodevices. Zinc oxide nanowires (ZnO NWs) were grown onto Indium Tin Oxide (ITO)-coated glass substrates by a chemical bath deposition method. The growth of ZnO NWs carried onto unannealed and annealed Indium Tin Oxide-coated glass substrates. Substrates were annealed at 400 °C for 90 min at ambient using a horizontal furnace. This work also focused on the effect of annealing condition of ITO-coated glass substrate on nanowires morphology, crystal phase, optical band gap, and electrical properties. Substrate annealing was found to have a significant effect on the nanowires dimension. The nanowire's morphology was obtained by FESEM which the average diameter and length found on unannealed ITO-coated glass substrate were 674.18 ± 26.75 nm and 3.107 ± 0.446 μm. However, the nanowire's average diameter and length on annealed ITO-coated glass substrate were 393.50 ± 27.02 nm and 3.175 ± 0.321 μm. XRD analysis confirmed that ZnO nanowires on substrates with both conditions were able to promote the growth of crystal structure with crystal plane orientation of (1 0 1) and (1 0 0) belongs to hexagonal wurtzite structure. The near-band-edge (NBE) emission of ZnO nanowires obtained by using Photoluminescence which grown on unannealed and annealed ITO-coated glass substrates were observed at 380 nm (3.20 eV) and 384 nm (3.23 eV). FTIR analysis showed that ZnO absorption bands in the region between 450 and 500 cm⁻¹ had arisen from interatomic vibrations due to the stretching of the ZnO bond. The resistivity of ZnO nanowires obtained by using the four-point probe method on unannealed and annealed substrates was found to be 2.0675 × 10⁻⁷ Ω cm and 2.0494 × 10⁻⁷ Ω cm.

本文重点研究了在未退火和退火的氧化铟锡涂层玻璃基板上的氧化锌纳米线的生长，这些玻璃基板对表面声波（SAW）压电纳米器件的结构，光学和电学性能。通过化学浴沉积方法，将氧化锌纳米线（ZnO NWs）生长在涂有氧化铟锡（ITO）的玻璃基板上。ZnO NW的生长携带在未退火和退火的氧化铟锡涂层玻璃基板上。使用卧式炉在室温下将基板在400°C退火90分钟。这项工作还集中于ITO涂层玻璃基板的退火条件对纳米线形态，晶相，光学带隙和电性能的影响。发现衬底退火对纳米线尺寸具有显着影响。纳米线' 通过FESEM获得S形貌，其在未退火的ITO涂覆的玻璃基板上发现的平均直径和长度为674.18±26.75nm和3.107±0.446μm。但是，纳米线在经过ITO退火处理的玻璃基板上的平均直径和长度为393.50±27.02 nm和3.175±0.321μm。XRD分析证实，在两种条件下的基板上的ZnO纳米线均能够促进晶体结构为（1 0 1）且（1 0 0）属于六方纤锌矿结构的晶体结构的生长。在380 nm（3.20 eV）和384 nm（3.23 eV）处观察到通过使用光致发光获得的ZnO纳米线的近带边缘（NBE）发射，该光在未退火和退火的ITO涂层玻璃基板上生长。FTIR分析表明ZnO吸收带在450至500 cm之间^-1是由于Zn O键的拉伸引起的原子间振动而产生的。ZnO的纳米线的电阻率通过使用未退火和退火的基板上的四点探针法得到的结果为2.0675×10 ^-7  Ω厘米和2.0494×10 ^-7  Ω厘米。