In this paper, multi-gate-driven In-Ga-Zn-O memtransistors integrated with memristive and transistor functions have been demonstrated. All of gates are covered by ion-gel and the stacking ion-gel/Al₂O₃ is used as the gate dielectric. Benefiting from planar gate coupling and positive charge capture of Al₂O₃, a sub-60 mV/decade subthreshold swing is observed. In addition, neuromorphic behaviors and memory functions were realized by applying a spike on each gate. The memtransistors exhibit a significant analog-resistive switching behavior with a switching ratio as large as 3.8 × 10³. Finally, we realize the modulation between the two gates, and use it to achieve the function of nonvolatile “OR” memlogic operations. This work led to realize a multi-gate-driven memtransistor with a sub-60 mV/decade switching, which provides a way to realize brain-inspired memory processing systems in the future.

在本文中，已经证明了集成了忆阻和晶体管功能的多栅极驱动In-Ga-Zn-O膜晶体管。所有的栅极都被离子凝胶覆盖，并且堆叠的离子凝胶/ Al ₂ O ₃被用作栅极电介质。得益于平面栅极耦合和Al ₂ O _3的正电荷捕获，可以观察到低于60 mV /十年的亚阈值摆幅。另外，通过在每个门上施加尖峰来实现神经形态行为和记忆功能。薄膜晶体管具有显着的模拟电阻开关性能，开关比高达3.8×10 ³。最后，我们实现了两个门之间的调制，并使用它来实现非易失性“或”存储操作。这项工作导致实现了一个低于60 mV /十进制开关的多栅极驱动的薄膜晶体管，这为将来实现灵感来自大脑的记忆处理系统提供了一种方法。