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Monitoring of defects creation sequence in 808 nm laser diode by reflectance analysis
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.microrel.2020.113639 Tieying Hao , Shiwei Feng , Xiang Zheng , Kun Bai
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.microrel.2020.113639 Tieying Hao , Shiwei Feng , Xiang Zheng , Kun Bai
Abstract Changes in both surface morphology and transient reflectance on the front facet of a diode laser are monitored during a catastrophic optical damage (COD) process in a single pulse operation. Use of a 1550 nm time-resolved micro-reflectance optical system (with time resolution of ~4 ns) allows us to monitor the creation sequences of up to four distinct COD seed points on an 808 nm laser facet within a period of
中文翻译:
通过反射分析监测 808 nm 激光二极管中的缺陷产生顺序
摘要 在单脉冲操作的灾难性光学损伤 (COD) 过程中,对二极管激光器正面的表面形貌和瞬态反射率的变化进行了监测。使用 1550 nm 时间分辨微反射光学系统(时间分辨率约为 4 ns)使我们能够在 808 nm 激光面上监控多达四个不同 COD 种子点的创建序列。
更新日期:2020-07-01
中文翻译:
通过反射分析监测 808 nm 激光二极管中的缺陷产生顺序
摘要 在单脉冲操作的灾难性光学损伤 (COD) 过程中,对二极管激光器正面的表面形貌和瞬态反射率的变化进行了监测。使用 1550 nm 时间分辨微反射光学系统(时间分辨率约为 4 ns)使我们能够在 808 nm 激光面上监控多达四个不同 COD 种子点的创建序列。