Abstract

We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sign of previously applied voltage. Relaxation curves demonstrate high stability of these conductivity values on a large timescale. Investigations of the antimony film structure allows to determine the percolation character of electron transport in strongly disordered films. We connect the memory effect in conductivity with modification of the percolation pattern due to recharging of some film regions at high bias voltages.

中文翻译：

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严重无序锑膜中电荷传输中的记忆效应

摘要

我们研究了在高偏压下强无序态非晶锑膜的电导率。我们观察到非线性电流-电压特性，其中零偏压下的电导率值是两个不同值之一，由先前施加的电压的符号确定。弛豫曲线表明这些电导率值在较大的时间范围内具有很高的稳定性。对锑膜结构的研究可以确定强无序膜中电子传输的渗透特性。我们将电导率中的记忆效应与渗滤模式的修改联系起来，这归因于某些薄膜区域在高偏置电压下的充电。