In this study, we fabricate amorphous indium tin gallium zinc oxide (a-ITGZO) thin-film transistors (TFTs) on colorless polyimide (CPI) substrates and examine their electrical characteristics as functions of the bending radius. A representative a-ITGZO TFT shows typical n -type behavior and operates with a mobility of 34.32 cm 2 V −1 s −1 , threshold voltage of −0.71 V, subthreshold swing of 169 mV, and on/off ratio of 2 × 10 7 . The a-ITGZO TFT operates stably even under a bending radius of 2 mm, regardless of the upward or downward bending. The thickness of the thin CPI substrate contributes to the stable operation of the bent TFT.

中文翻译：

---

无色聚酰亚胺基板上的可弯曲a-ITGZO TFT的电气特性

在这项研究中，我们在无色聚酰亚胺（CPI）基板上制造非晶铟锡镓锌氧化物（a-ITGZO）薄膜晶体管（TFT），并检查它们的电特性与弯曲半径的关系。代表性的a-ITGZO TFT显示典型的n型行为，并以34.32 cm 2 V -1 s -1的迁移率，-0.71 V的阈值电压，169 mV的亚阈值摆幅以及2×10的开/关比进行操作7。即使向上或向下弯曲，a-ITGZO TFT甚至在2 mm的弯曲半径下也能稳定运行。CPI薄基板的厚度有助于弯曲TFT的稳定运行。