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Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-05-21 , DOI: 10.1088/1361-6641/ab8439
Hosang Lee , Kyoungah Cho , Donghyun Kim , Sangsig Kim

In this study, we fabricate amorphous indium tin gallium zinc oxide (a-ITGZO) thin-film transistors (TFTs) on colorless polyimide (CPI) substrates and examine their electrical characteristics as functions of the bending radius. A representative a-ITGZO TFT shows typical n -type behavior and operates with a mobility of 34.32 cm 2 V −1 s −1 , threshold voltage of −0.71 V, subthreshold swing of 169 mV, and on/off ratio of 2 × 10 7 . The a-ITGZO TFT operates stably even under a bending radius of 2 mm, regardless of the upward or downward bending. The thickness of the thin CPI substrate contributes to the stable operation of the bent TFT.

中文翻译:

无色聚酰亚胺基板上的可弯曲a-ITGZO TFT的电气特性

在这项研究中,我们在无色聚酰亚胺(CPI)基板上制造非晶铟锡镓锌氧化物(a-ITGZO)薄膜晶体管(TFT),并检查它们的电特性与弯曲半径的关系。代表性的a-ITGZO TFT显示典型的n型行为,并以34.32 cm 2 V -1 s -1的迁移率,-0.71 V的阈值电压,169 mV的亚阈值摆幅以及2×10的开/关比进行操作7。即使向上或向下弯曲,a-ITGZO TFT甚至在2 mm的弯曲半径下也能稳定运行。CPI薄基板的厚度有助于弯曲TFT的稳定运行。
更新日期:2020-05-21
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