Multivalued logic (MVL) circuits with higher efficiencies, such as the ternary inverter, can be considered as promising structures to overcome the limitation of a binary system. Photo-responsive characteristics of the two-dimensional (2D) MoS2 and the organic-rubrene nanosheet (NS) n-p heterojunction field-effect-transistor (FET) are studied with the aim to construct a novel photo-triggered ternary inverter as a MVL circuit. Anti-ambipolar transistor (AAT) characteristics were observed for the MoS2/organic-rubrene-NS n-p heterojunction FETs. The serially connected devices comprising the AAT with a single MoS2 (n-type)-based FET or with a single rubrene-NS (p-type)-based FET were fabricated to investigate inverter characteristics, which can be advantageous compared to the conventional complementary metal-oxide semiconductor employed in a binary logic circuit. Interestingly, the inverters employing the AAT connected to the p-type rubrene-NS-based FET in series were successfully operated as MVL circuits under light irradiation. The characteristics of new photo-triggered ternary inverters originate from the distinct photo-responsivity of p-type organic-rubrene-NS as well as the positive shift of the threshold voltage of the AAT and p-type rubrene-NS-based FET based on the photo-gating effect, achieved under specific light-irradiation conditions. In this work, new photo-triggered (i.e., photo-driven) ternary inverter using 2D-MoS2 and organic semiconducting rubrene-NS heterojunction FETs were successfully realized. The heterojunctions of 2D inorganic and organic semiconductors exhibit great potential toward the development of new photo-responsive MVL circuits and multifunctional transistors with extraordinary characteristics and performance including energy saving.

中文翻译：

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光响应 MoS ₂有机红荧烯异质结场效应晶体管：应用于光触发三元逆变器

具有更高效率的多值逻辑 (MVL) 电路，例如三元反相器，可以被认为是克服二元系统限制的有前途的结构。研究二维 (2D) MoS2 和有机红荧烯纳米片 (NS) np 异质结场效应晶体管 (FET) 的光响应特性，旨在构建一种新型光触发三元逆变器作为 MVL 电路. 观察到 MoS2/有机-红荧烯-NS np 异质结 FET 的抗双极晶体管 (AAT) 特性。制造包含 AAT 和单个 MoS2（n 型）基 FET 或单个红荧烯-NS（p 型）基 FET 的串联器件，以研究逆变器特性，与二进制逻辑电路中采用的传统互补金属氧化物半导体相比，这可能是有利的。有趣的是，采用 AAT 串联连接到基于 p 型红荧烯-NS 的 FET 的逆变器在光照射下成功地作为 MVL 电路运行。新型光触发三元逆变器的特性源于p型有机红荧烯-NS独特的光响应性以及AAT和基于p型红荧烯-NS的FET阈值电压的正偏移在特定光照射条件下实现的光门控效果。在这项工作中，成功实现了使用 2D-MoS2 和有机半导体红荧烯-NS 异质结 FET 的新型光触发（即光驱动）三元逆变器。