In this study, the low-temperature micro-photoluminescence (PL) technology was employed to investigate the transformation of nitrogen-vacancy (NV), silicon-vacancy (SiV) centers in diamond crystal. Results showed that the NV and SiV luminescence were controlled by electron irradiation followed by thermal annealing. Both centers vanished together with the emergence of neutral single vacancy (GR1 center) after 200keV electron irradiation. Interstitial related defects and vacancies were activated to diffuse by annealing (above ~400 and 700℃, respectively ). The vacancies migrated to be captured by N and Si atoms due to the strain fields around the atoms attracted vacancies, and the NV and SiV centers appeared again in the PL spectra. In addition, compared the annealing behavior with NV center, the new emission at 639.7nm was attributed to the nitrogen combined with carbon interstitials.

中文翻译：

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CVD金刚石中氮空位和硅空位中心转变的光致发光研究

在这项研究中，低温微光致发光（PL）技术被用来研究金刚石晶体中氮空位（NV）、硅空位（SiV）中心的转变。结果表明，NV和SiV发光受电子辐射和热退火控制。在200keV电子辐照后，两个中心随着中性单空位（GR1中心）的出现而消失。间隙相关的缺陷和空位通过退火（分别高于~400 和 700℃）被激活扩散。由于原子周围的应变场吸引空位，空位迁移被 N 和 Si 原子捕获，并且 NV 和 SiV 中心再次出现在 PL 光谱中。此外，将退火行为与 NV 中心进行比较，新的发射在 639。