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Electric field control of ordered oxygen vacancy planes and antiferromagnetic structures in strontium cobaltite
Journal of Physics: Condensed Matter ( IF 2.3 ) Pub Date : 2020-05-22 , DOI: 10.1088/1361-648x/ab8afe
Bin Cui 1, 2 , Yu Huan 3 , Jifan Hu 1
Affiliation  

The polarized ionic liquids (ILs) could generate intense electric fields on the surface of solid-state materials and create functional defects by ion migration within them, resulting in phase transitions of metal–insulator or paramagnet–ferromagnet, etc. Such a strong electric field even provides an opportunity for the control of spin ordering in antiferromagnetic (AFM) crystal which is difficult to be manipulated due to the strong exchange coupling between antiparallel spins in the whole bulk. Here we find that the ferromagnetic SrCoO3 of 40 nm could be transformed to AFM SrCoO2.5 with ordered oxygen vacancy planes either vertical (V-SrCoO2.5) or parallel (P-SrCoO2.5) to the surface by IL gating. The spin Hall magnetoresistances suggest that the AFM easy axes of V- and P-SrCoO2.5 are along [010] and $\left[1\overline{1}0\right]$, respectively. The orientations of gating induced oxygen vacancy planes are related to the oxygen framework rotation in the parent SrCoO3 and could be controlled by the strain engineering. Our results not only supply a novel way to manipulate the AFM spins by creating functional ordered defects, but also reveal the effect of oxygen framework rotation on the formation of oxygen vacancies under ionic liquid gating.



中文翻译:

钴酸锶中有序氧空位面和反铁磁结构的电场控制

极化离子液体(ILs)可以在固态材料表面产生强电场,并通过其中的离子迁移产生功能缺陷,导致金属-绝缘体或顺磁体-铁磁体等相变。如此强的电场甚至为控制反铁磁(AFM)晶体中的自旋排序提供了机会,由于整个体中反平行自旋之间的强交换耦合而难以操纵。在这里,我们发现 40 nm 的铁磁性 SrCoO 3可以转化为 AFM SrCoO 2.5,具有垂直(V-SrCoO 2.5)或平行(P-SrCoO 2.5 )的有序氧空位面) 通过 IL 门控到表面。自旋霍尔磁阻表明 V- 和 P-SrCoO 2.5的 AFM 易轴分别沿着 [010] 和$\left[1\overline{1}0\right]$。门控诱导氧空位面的取向与母体SrCoO 3中的氧骨架旋转有关,并且可以通过应变工程来控制。我们的结果不仅提供了一种通过产生功能有序缺陷来操纵 AFM 自旋的新方法,而且还揭示了氧骨架旋转对离子液体门控下氧空位形成的影响。

更新日期:2020-05-22
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