Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad.

中文翻译：

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采用 150 nm CMOS 技术的抗辐射 DMAPS 像素传感器，可在 LHC 上运行

自 1990 年代后期开发的单片有源像素传感器 (MAPS) 使用具有薄外延层的硅衬底，其中通过无序扩散而不是通过电场漂移收集沉积电荷。因此，信号小而慢，辐射容限低于 LHC 实验要求的 100 到 1000 倍。我们开发了采用 150 nm CMOS 技术并使用高电阻率衬底的全耗尽 (D)MAPS 像素传感器以及高偏置电压。该开发已在三个后续迭代中进行，从原型到包含适合 LHC 操作的完整读出架构的大型像素矩阵。完整的 CMOS 电子器件嵌入在大型深 n 阱中，同时用作收集节点（大型电极设计）。使用实验室测试以及粒子束在辐照之前和之后对这些设备进行了深入的表征。这些设备可以处理 LHC pp 实验的最里面像素探测器所看到的粒子率，或者计划中的 HL-LHC 升级的外部像素层所看到的粒子率。它们对至少 $10^{15}~\mathrm{n_{eq}/cm^2}$ 的粒子通量和至少 50 Mrad 的总电离剂量是难以辐射的。