A horizontal p−i−n ridge waveguide emitter on a silicon (100) substrate with a Ge0.91Sn0.09/Ge multi-quantum-well (MQW) active layer was fabricated by molecular beam epitaxy. The device structure was designed to reduce light absorption of metal electrodes and improve injection efficiency. Electroluminescence (EL) at a wavelength of 2160 nm was observed at room temperature. Theoretical calculations indicate that the emission peak corresponds well to the direct bandgap transition (n1Γ−n1HH). The light output power was about 2.0 μW with an injection current density of 200 kA/cm2. These results show that the horizontal GeSn/Ge MQW ridge waveguide emitters have great prospects for group-IV light sources.

中文翻译：

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Si衬底上水平电注入GeSn/Ge多量子阱脊波导发射器

通过分子束外延在具有 Ge0.91Sn0.09/Ge 多量子阱 (MQW) 活性层的硅 (100) 衬底上制造水平 p-i-n 脊形波导发射器。该器件结构旨在减少金属电极的光吸收并提高注入效率。在室温下观察到波长为 2160 nm 的电致发光 (EL)。理论计算表明发射峰与直接带隙跃迁 (n1Γ−n1HH) 很好地对应。光输出功率约为 2.0 μW，注入电流密度为 200 kA/cm2。这些结果表明水平 GeSn/Ge MQW 脊形波导发射器在 IV 族光源方面具有广阔的前景。