A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with verify algorithm (ISPVA) was implemented by using different pulse widths between 10 $\mathsf{\mu }$ s and 50 ns and assessed on Al-doped HfO ${}_2$ 4 kbit RRAM memory arrays. The switching stability was assessed by means of an endurance test of 1k cycles. Both conductive levels and voltages needed for switching showed a remarkable good behavior along 1k reset/set cycles regardless the programming pulse width implemented. Nevertheless, the distributions of voltages as well as the amount of energy required to carry out the switching operations were definitely affected by the value of the pulse width. In addition, the data retention was evaluated after the endurance analysis by annealing the RRAM devices at 150 ^oC along 100 h. Just an almost negligible increase on the rate of degradation of about 1 $\mathsf{\mu }$ A at the end of the 100 h of annealing was reported between those samples programmed by employing a pulse width of 10 $\mathsf{\mu }$ s and those employing 50 ns. Finally, an endurance performance of 200k cycles without any degradation was achieved on 128 RRAM devices by using programming pulses of 100 ns width.

中文翻译：

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基于Al：HfO2的RRAM阵列中的编程脉冲宽度评估，可实现可靠且低能耗的性能

为了在电阻式随机存取存储器（RRAM）存储器中实现快速和低能耗的开关操作，关键的一步是减小编程脉冲宽度。在这项研究中，通过使用10之间的不同脉冲宽度来实现带有验证算法的增量步进脉冲（ISPVA） $\mathsf{\mu }$ s和50 ns，并在Al掺杂的HfO上评估 ${}_2$ 4 kbit RRAM存储器阵列。开关稳定性通过1 k个周期的耐久测试来评估。无论执行哪种编程脉冲宽度，导通电平和切换所需的电压在1k的复位/设置周期中都表现出出色的性能。然而，电压的分布以及进行开关操作所需的能量肯定受到脉冲宽度值的影响。另外，在耐久性分析之后，通过将RRAM器件在150 ^o C沿100 h退火，评估了数据保留。大约1的降解率增加几乎可以忽略不计 $\mathsf{\mu }$ 在通过使用10脉冲宽度编程的那些样本之间报告了退火100小时结束时的A $\mathsf{\mu }$ s和使用50 ns的那些。最后，通过使用100 ns宽度的编程脉冲，在128个RRAM器件上实现了200k个周期的耐久性能，而没有任何劣化。