The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a crucial threat to the device’s reliability. In this work, we explore the possibility of using a SiC planar IGBT structure to approach high performance to the level of a SiC trench IGBT, without suffering the high gate oxide field. The proposed SiC planar IGBT features buried p-layers directly under the p-bodies, and thus can be formed using the same mask set. The region between the buried p-layer and the p-body is heavily doped with n-type dopants so that the conductivity modulation is improved. Comprehensive TCAD simulations have been carried out to verify this concept, and the simulation results show the new SiC planar IGBT exhibits a high performance comparable to the trench IGBT, and also exhibits a low gate oxide field.

中文翻译：

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探索SiC平面IGBT以实现类似于SiC沟槽IGBT的增强电导率调制

最新的硅绝缘栅双极型晶体管（IGBT）具有沟槽栅，因为它增强了电导率调制。然而，SiC沟槽IGBT面临着栅极氧化物中高电场的严峻挑战，这对器件的可靠性构成了严峻的威胁。在这项工作中，我们探索了使用SiC平面IGBT结构在不遭受高栅氧化场的情况下将高性能提高到SiC沟槽IGBT的水平的可能性。所提出的SiC平面IGBT在p体正下方具有掩埋p层，因此可以使用相同的掩模组来形成。掩埋的p层和p体之间的区域被n型掺杂剂重掺杂，从而改善了电导率调制。已经进行了全面的TCAD仿真以验证这一概念，