Abstract A new structure of kesterite thin-film solar cells is simulated using SCAPS software. In addition, the structures of CZTS/ZnMgO, CZTSSe/CZTS/CdS and CZTSSe/CZTS/ZnMgO are suggested and scrutinized. In CZTS/ZnMgO structure, the efficiency, open-circuit voltage and short circuit current at the absorber layer thickness of 3 μm have been improved 35%, 15%, and 15% respectively. Furthermore, the efficiency of the proposed solar cell has been enhanced 60% by adding the CZTSSe absorber layer on the back of the CZTS layer. The optimum buffer layer thickness in the structures of CZTSSe/CZTS/CdS and CZTSSe/CZTS/ZnMgO are 150 nm and 125 nm, respectively. The simulation results show that the basic photovoltaic parameters (VOC, JSC, FF and η) have been decreased by variation of temperature from 300 K to 400 K. The optimal bandgap of the CZTSSe and ZnMgO in the structure of CZTSSe/CZTS/ZnMgO are obtained 0.9eV and 3.48eV, respectively in the ZnMgO optimal thickness of 50 nm. The highest efficiency of the kesterite solar cell with Zn0.81Mg0.19O buffer layer is 17.05%.

中文翻译：

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使用双吸收层和 ZnMgO 缓冲层提高黄铜矿薄膜太阳能电池的性能

摘要 利用SCAPS软件模拟了一种新型黄锌矿薄膜太阳能电池结构。此外，还建议并仔细研究了 CZTS/ZnMgO、CZTSSe/CZTS/CdS 和 CZTSSe/CZTS/ZnMgO 的结构。在CZTS/ZnMgO结构中，吸收层厚度为3 μm时的效率、开路电压和短路电流分别提高了35%、15%和15%。此外，通过在 CZTS 层背面添加 CZTSSe 吸收层，所提出的太阳能电池的效率提高了 60%。CZTSSe/CZTS/CdS和CZTSSe/CZTS/ZnMgO结构中的最佳缓冲层厚度分别为150 nm和125 nm。模拟结果表明，基本光伏参数（VOC、JSC、FF和η）随着温度从300 K变化到400 K而降低。CZTSSe/CZTS/ZnMgO结构中CZTSSe和ZnMgO的最佳带隙分别为0.9eV和3.48eV，ZnMgO最佳厚度为50 nm。具有Zn0.81Mg0.19O缓冲层的锌黄铜矿太阳能电池的最高效率为17.05%。