Abstract This paper proposes and investigates the performance of SiGe sourced Doping-less Tunnel Field Effect Transistor (DLTFET) by applying non-hysteretic Negative Capacitance (NC) effect using a ferroelectric material PZT. The parameters of PZT such as thickness (tFE), capacitance (CFE) and voltage (VFE) across the ferroelectric are calculated using the Landau-Khalatnikov equation. The device can operate at a gate voltage of 0.49 V [optimized] with a lowest achieved threshold voltage (VT) ~0.065 V. The average sub-threshold slope (AVSS) was scaled down to ~20 mV/dec and the sub-threshold slope (SS) was reduced to ~ 15.5 mV/dec at PZT thickness (tFE) 1.50 × 10−04 cm without affecting the maximum ON-current and the minimum OFF-current attained by the device. The effect of varying tFE on the simulated results has also been investigated. An intermediate value of tFE i.e. 1.50 × 10−04 cm is proposed to be ideal for the SiGe sourced DLTFET. The performance of the device is also measured by contour properties under the combined effect of reduced gate voltage and varying tFE. From all the simulation results and their study, it is observed that Negative Capacitance based SiGe DLTFET provides a better SS and VT with a significantly low gate voltage making it ideal for a low power-consuming device.

中文翻译：

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在 SiGe 源的 Doping-less Tunnel FET 上实现负电容

摘要 本文通过使用铁电材料 PZT 应用非滞后负电容 (NC) 效应，提出并研究了 SiGe 源无掺杂隧道场效应晶体管 (DLTFET) 的性能。PZT 的参数，如厚度 (tFE)、电容 (CFE) 和铁电体两端的电压 (VFE) 使用 Landau-Khalatnikov 方程计算。该器件可以在 0.49 V [优化] 的栅极电压下工作，达到最低阈值电压 (VT) ~0.065 V。平均亚阈值斜率 (AVSS) 被缩小到 ~20 mV/dec 和亚阈值在 PZT 厚度 (tFE) 1.50 × 10−04 cm 时，斜率 (SS) 降低至 ~ 15.5 mV/dec，而不会影响器件获得的最大导通电流和最小截止电流。还研究了改变 tFE 对模拟结果的影响。tFE 的中间值，即 1.50 × 10-04 cm 被认为是 SiGe 源 DLTFET 的理想选择。器件的性能还通过降低栅极电压和变化 tFE 的综合影响下的轮廓特性来衡量。从所有的模拟结果和他们的研究中可以看出，基于负电容的 SiGe DLTFET 提供了更好的 SS 和 VT，栅极电压非常低，使其成为低功耗器件的理想选择。