A new ferrocene-containing iridium(III) complex (complex 2) has been designed and synthesized. Its structure, photophysical property, electrochemistry and memory behaviors were well investigated. The memory device with a sandwich structure of ITO/complex 2/Al (D2) exhibited flash memory performance with a bistable conductive process, which showed a high ON/OFF current ratio of 10³, long retention time of 10³ s, and low threshold voltage of −0.55 V. After 10⁵ read cycles, no significant degradation was observed in the ON and OFF states at a read voltage of 1.0 V. The ferrocene group of complex 2 serves as the redox-active unit, and a redox memory mechanism is proposed to explain the conductive process based on the analysis of I–V, cyclic voltammetry and theoretical calculation data. Thus, the design of redox-active metal complex used for novel non-volatile memory device provided an alternative strategy for the further development of organic memory materials and devices.‬

设计并合成了一种新的含二茂铁的铱（III）配合物（配合物2）。对其结构，光物理性质，电化学和记忆行为进行了深入研究。具有ITO /复合物2 / Al（D2）夹层结构的存储器件具有双稳态导电工艺的闪存性能，其开/关电流比高达10 ³，长的保持时间为10 ³  s，并且低-0.55伏的阈值电压后10个⁵的读周期，在ON和OFF状态，观察到在1.0 V.二茂铁基团的复合物的读出电压没有显著降解2作为氧化还原活性单元，基于IV分析，循环伏安法和理论计算数据，提出了一种氧化还原记忆机制来解释导电过程。因此，用于新型非易失性存储器件的氧化还原活性金属配合物的设计为有机存储材料和器件的进一步开发提供了替代策略。