Abstract In this study, the Cr/n-Si/Al and Cr/Graphene oxide-Fe3O4 nanocomposites (GO-Fe3O4)/n-Si/Al heterojunction devices were fabricated and their Schottky diode performances were studied comparatively. In the first step, the GO-Fe3O4 nanocomposites were synthesized and the film characterization was carried out via XRD, SEM and AFM analysis methods. The results showed that the performance of the Cr/GO-Fe3O4/n-Si/Al device was better than that of Cr/n-Si/Al. For example, experimental ideality factors and the barrier heights were determined as 3.75 and 0.70 eV for Cr/n-Si/Al while they were found as 1.28 ve 0.63 eV for Cr/GO-Fe3O4/n-Si/Al heterojunction device. Next, we examined the electronic properties of the Cr/GO-Fe3O4/n-Si/Al heterojunction device as a function of temperature and the device performance of Cr/GO-Fe3O4/n-Si/Al heterojunction was evaluated by the analysis of I-V characteristics. To examine the electrical features of Cr/GO-Fe3O4/n-Si/Al heterojunction device, I-V measurements were studied between 100 K and 360 K in steps of 20 K. Next, the device parameters such as barrier height, ideality factor and series resistance were calculated by using Thermionic Emission (TE) and Cheung method. As a result of these measurements, it was found that the barrier height and ideality factor of the Cr/GO– Fe3O4/n-Si/Al heterojunction were depended on temperature, in which the barrier height increases while the ideality factor decreases with increasing temperature. According to calculations done by TE, the barrier height and ideality factor of Cr/GO-Fe3O4/n-Si/Al heterojunction device were found to be 0.26 eV and 2.46 eV at 100 K to 0.73 eV and 1.28 eV at 360 K. Additionally, the capacitance-voltage characteristics of the mentioned structure were analyzed at room temperature.

中文翻译：

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Cr/氧化石墨烯-Fe3O4纳米复合材料/n-Si异质结器件的温度相关电学性能分析

摘要 本研究制备了 Cr/n-Si/Al 和 Cr/氧化石墨烯-Fe3O4 纳米复合材料 (GO-Fe3O4)/n-Si/Al 异质结器件，并比较研究了它们的肖特基二极管性能。在第一步中，合成了 GO-Fe3O4 纳米复合材料，并通过 XRD、SEM 和 AFM 分析方法进行了薄膜表征。结果表明，Cr/GO-Fe3O4/n-Si/Al 器件的性能优于 Cr/n-Si/Al 器件。例如，实验理想因子和势垒高度对于 Cr/n-Si/Al 被确定为 3.75 和 0.70 eV，而对于 Cr/GO-Fe3O4/n-Si/Al 异质结器件，它们被确定为 1.28 ve 0.63 eV。下一个，我们检查了 Cr/GO-Fe3O4/n-Si/Al 异质结器件的电子特性作为温度的函数，并通过分析 IV 特性评估了 Cr/GO-Fe3O4/n-Si/Al 异质结器件的性能. 为了检查 Cr/GO-Fe3O4/n-Si/Al 异质结器件的电气特性，在 100 K 和 360 K 之间以 20 K 为步长研究了 IV 测量。接下来，器件参数，如势垒高度、理想因子和系列通过使用热离子发射（TE）和Cheung方法计算电阻。作为这些测量的结果，发现 Cr/GO-Fe3O4/n-Si/Al 异质结的势垒高度和理想因子取决于温度，其中势垒高度增加而理想因子随着温度升高而减小. 根据 TE 的计算，