The Landau field-effect transistors have been previously investigated to lower the power dissipation of integrated circuits by reducing the subthreshold swing (SS) below the Boltzmann limit of 60 mV/dec. The basic idea is to replace the classical gate insulator with dielectrics that exhibit a negative capacitance (NC) associated with the double-well energy landscape, for example, ferroelectrics (FE), air-gap capacitors, or a combination thereof. In this article, we demonstrate that the same NC effect can also be used to achieve the devices more robust to negative-bias temperature instability (NBTI), which continues to be a major reliability challenge for scaled p-type transistors. We demonstrate that with careful design of an NC-based Landau switch, the intrinsic NBTI degradation can be fully compensated while still maintaining hysteresis-free operation and steeper slope needed for the logic switch. In fact, the parasitic capacitances in a FinFET counterintuitively make a negative capacitance field effect transistor (NCFET) more NBTI tolerant. The proposed device is validated using the numerical simulations by technologically relevant p-type SiGe FinFeTs. The results suggest the intriguing possibility that a careful, physics-informed NCFET design can simultaneously achieve reliability performance metrics.

中文翻译：

---

自补偿 NBTI-Free 负电容 FinFET 的设计原理

Landau 场效应晶体管先前已被研究通过将亚阈值摆幅 (SS) 降低到 60 mV/dec 的玻尔兹曼极限以下来降低集成电路的功耗。基本思想是用表现出与双阱能量景观相关的负电容 (NC) 的电介质代替经典的栅极绝缘体，例如铁电体 (FE)、气隙电容器或它们的组合。在本文中，我们证明了相同的 NC 效应也可用于实现对负偏置温度不稳定性 (NBTI) 更稳健的器件，这仍然是缩放 p 型晶体管的主要可靠性挑战。我们证明，通过精心设计基于 NC 的 Landau 开关，固有的 NBTI 退化可以得到完全补偿，同时仍然保持逻辑开关所需的无滞后操作和更陡峭的斜率。事实上，FinFET 中的寄生电容违反直觉，使负电容场效应晶体管 (NCFET) 更能容忍 NBTI。所提出的器件通过技术相关的 p 型 SiGe FinFeT 使用数值模拟进行验证。结果表明了一种有趣的可能性，即谨慎的、基于物理的 NCFET 设计可以同时实现可靠性性能指标。所提出的器件通过技术相关的 p 型 SiGe FinFeT 使用数值模拟进行验证。结果表明了一种有趣的可能性，即谨慎的、基于物理的 NCFET 设计可以同时实现可靠性性能指标。所提出的器件通过技术相关的 p 型 SiGe FinFeT 使用数值模拟进行验证。结果表明了一种有趣的可能性，即谨慎的、基于物理的 NCFET 设计可以同时实现可靠性性能指标。