In this article, the impact of self-heating effect (SHE) on nanosheet gate-all-around (GAA) transistor with a vertical combo spacer and different underlap/overlap channels is studied by the 3-D TCAD simulation. To achieve high authoritative evidences, the ${I}_{\text {d}}$ – ${V}_{\text {g}}$ characteristic with SHE is calibrated with the experimental data. First, the change of electrical characteristic introduced by different dielectrics of a single- ${k}$ spacer is investigated, and the results show that the current of ON-state ( ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ) is a power function of relative permittivity, whereas the OFF-state ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) exhibits a linear dependence. Second, a novel vertically wrapped combo spacer is proposed to achieve a compromise between thermal characteristic and electrical performance for the first time. The electrothermal characteristics of the combo spacer under different underlap/overlap channels are also studied, and the results showed that the combo spacer composed of inner Si₃N₄ and outer HfO₂ has the highest ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ but smaller thermal resistance and lower lattice temperature compared with other different combinations. At last, a CMOS inverter with Si₃N₄/HfO₂ combo spacer is demonstrated for its improvement in propagation delay.

中文翻译：

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用于优化 7 纳米纳米片栅极全能晶体管的电热特性的垂直组合垫片

在本文中，通过 3-D TCAD 模拟研究了自热效应 (SHE) 对具有垂直组合间隔和不同下重叠/重叠通道的纳米片环栅 (GAA) 晶体管的影响。为了获得高权威的证据， ${I}_{\text {d}}$ —— ${V}_{\text {g}}$ SHE 的特性是用实验数据校准的。一、单晶硅不同电介质引入的电特性变化 ${k}$ 对垫片进行了研究，结果表明导通状态的电流（ ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ) 是相对介电常数的幂函数，而 OFF 状态 ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) 表现出线性相关性。其次，首次提出了一种新型的垂直包裹组合垫片，以实现热特性和电气性能之间的折衷。还研究了不同下重叠/重叠通道下组合隔板的电热特性，结果表明由内部Si ₃ N ₄和外部HfO ₂组成的组合隔板的电热特性最高。 ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ 但与其他不同组合相比，热阻更小，晶格温度更低。最后，展示了具有 Si ₃ N ₄ /HfO ₂组合隔离物的 CMOS 反相器，以改善其传播延迟。