This article presents the design, experimental results, and modeling of an inversion-mode CMOS varactor integrated in the STMicroelectronics 55-nm BiCMOS technology. The device was characterized from 1 to 325 GHz, demonstrating high-quality factor at millimeter-waves. For instance, a quality factor of 7 at around 190 GHz for a tuning ratio ( ${C}_{\text {max}}/{C}_{\text {min}}$ ) greater than 4 was measured. This performance overpasses that of accumulation-mode varactors usually provided in CMOS technologies design kits, for frequencies beyond about 100 GHz. In addition, a small-signal electrical model is provided from 100 to 250 GHz.

中文翻译：

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1-325-GHz 频带中高度可调的高 Q 反转模式 MOS 变容二极管

本文介绍了集成在 STMicroelectronics 55-nm BiCMOS 技术中的反型模式 CMOS 变容二极管的设计、实验结果和建模。该器件的特性范围为 1 至 325 GHz，展示了毫米波的高品质因数。例如，在 190 GHz 附近，对于大于 4 的调谐比 (${C}_{\text {max}}/{C}_{\text {min}}$) 测量的品质因数为 7。对于超过 100 GHz 的频率，这种性能超过了通常在 CMOS 技术设计套件中提供的累积模式变容器的性能。此外，还提供了 100 至 250 GHz 的小信号电气模型。