Wereport on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe inversely scaling peak output current and transconductance. Devices exhibited a peak drain current of ~700 mA/mm and a peak transconductance of ~150 mS/mm, some of the highest reported thus far for a diamond metal semiconductor FET (MESFET). Reduced sheet resistance of the diamond surface after V2O5 deposition was verified by four probe measurement. These results show great potential for improvement of diamond FET devices through scaling of critical dimensions and adoption of robust transition metal oxides such as V2O5.

中文翻译：

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具有 V₂O₅ 诱导转移掺杂的金刚石场效应晶体管：扩展到 50 纳米栅极长度

我们报告了包含 V2O5 作为表面受体材料以诱导转移掺杂的氢端接金刚石场效应晶体管 (FET) 的制造和测量。比较一系列低至 50 nm 的栅极长度，我们观察到反向缩放峰值输出电流和跨导。器件表现出~700 mA/mm 的峰值漏极电流和~150 mS/mm 的峰值跨导，这是迄今为止报道的金刚石金属半导体 FET (MESFET) 的最高值。通过四探针测量证实了 V2O5 沉积后金刚石表面的薄层电阻降低。这些结果显示了通过缩放关键尺寸和采用坚固的过渡金属氧化物（如 V2O5）来改进金刚石 FET 器件的巨大潜力。