In this article, an analytical model on the influence of the acceptor-type trap on the 2-dimensional electron gas (2DEG) density is proposed for GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). Based on the charge-control method, a numerical analysis of the 2DEG in both the subthreshold and above-threshold regions is carried out with the deep-level and band-tail acceptor-type traps at the AlGaN/insulator interface and the AlGaN/GaN interface. In particular, the influence of the acceptor-type trap on the 2DEG density and the gate-control capability in the subthreshold region is modeled for the first time. The results have shown that the acceptor-type trap plays an important role in weakening the gate-control capability of the 2DEG density in the subthreshold region. The experimental results, together with the modeling and numerical calculations, have shown consistent 2DEG density values under various gate voltages, which verify the proposed model.

中文翻译：

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模拟受体型陷阱对 GaN MIS-HEMT 的 2DEG 密度的影响

在本文中，针对 GaN 金属-绝缘体-半导体高电子迁移率晶体管 (MIS-HEMT)，提出了一种关于受体型陷阱对二维电子气 (2DEG) 密度影响的分析模型。基于电荷控制方法，利用AlGaN/绝缘体界面处的深能级和带尾受体型陷阱以及AlGaN/GaN，对亚阈值和阈值以上区域的2DEG进行了数值分析界面。特别是，首次模拟了受主型陷阱对亚阈值区域的 2DEG 密度和栅极控制能力的影响。结果表明，受主型陷阱在削弱亚阈值区域 2DEG 密度的栅极控制能力方面起着重要作用。实验结果，