Deep-level traps in AlGaN/GaN- and AlInN/GaN-based HEMTs with different buffer doping technologies are identified by drain current transient spectroscopy (DCTS) and low-frequency (LF) output admittance ( ${Y}_{{22}}$ ) dispersion techniques. TCAD simulations are also carried out to determine the spatial location and type of traps. The DCTS and LF ${Y}_{{22}}$ measurements on Al_0.25Ga_0.75N/GaN HEMT (Fe-doped buffer) reveal a single electron trap at ${E}_{C} - {0.47}$ eV. On the other hand, an electron trap at ${E}_{C} -$ (0.53–0.59) eV and a deep hole trap at ${E}_{V} + {0.82}$ eV are detected in Al_0.845In_0.155N/AlN/GaN HEMT with unintentionally doped (UID) buffer, while a slow detrapping behavior is noticed at ${E}_{C} - {0.6}$ eV in Al_0.83In_0.17N/AlN/GaN HEMT with C-doped buffer. The DCTS and LF ${Y}_{{22}}$ measurements yield nearly the same trap signatures, indicating the reliability of the trap characterization techniques used in this article. The simulated LF ${Y}_{{22}}$ characteristics show that all these traps are acceptor-like states located in the buffer layer. The identified trap parameters in various buffers may be helpful to improve the crystalline quality of the epitaxial buffer layers.

中文翻译：

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具有不同缓冲掺杂技术的 AlGaN/GaN 和 AlInN/GaN 基 HEMT 中的深能级陷阱

具有不同缓冲掺杂技术的 AlGaN/GaN 和 AlInN/GaN 基 HEMT 中的深能级陷阱通过漏极电流瞬态光谱 (DCTS) 和低频 (LF) 输出导纳来识别。 ${Y}_{{22}}$ ) 分散技术。还进行了 TCAD 模拟以确定陷阱的空间位置和类型。DCTS 和 LF ${Y}_{{22}}$ 对 Al _0.25 Ga _0.75 N/GaN HEMT（Fe 掺杂缓冲液）的测量显示在 ${E}_{C} - {0.47}$ EV。另一方面，电子陷阱在 ${E}_{C} -$ (0.53–0.59) eV 和一个深孔陷阱 ${E}_{V} + {0.82}$ 在具有无意掺杂 (UID) 缓冲液的Al _0.845 In _0.155 N/AlN/GaN HEMT中检测到 eV ，同时在 ${E}_{C} - {0.6}$ eV in Al _0.83 In _0.17 N/AlN/GaN HEMT 与 C 掺杂缓冲液。DCTS 和 LF ${Y}_{{22}}$ 测量产生几乎相同的陷阱特征，表明本文中使用的陷阱表征技术的可靠性。模拟的 LF ${Y}_{{22}}$ 特性表明所有这些陷阱都是位于缓冲层中的类受体状态。确定的各种缓冲层中的陷阱参数可能有助于提高外延缓冲层的结晶质量。