In this article, we have developed an amorphous CuNiSnO (a-CNTO), which is a p-type amorphous oxide semiconductor (AOS). The a-CNTO thin films were deposited by the pulsed laser deposition method, having high amorphous quality with a rather smooth surface. The a-CNTO films grown at 100 °C exhibited the smoothest surface (root-mean-square roughness of 0.25 nm), highest visible transparency (~85%), and most favorable p-type conductivity (hole concentration of ~1015 cm−3), which are very suitable for electronic device fabrication. Thus, the obtained p-type a-CNTO thin-film transistors (TFTs) have an ON-to- OFF current ratio of $\sim 1.2\times 10^{{5}}$ , the threshold voltage of −2.3 V, the field-effect mobility of 1.37 cm2/Vs, and subthreshold swing of 0.70 V/decade. As a new kind of p-type AOS, the achievement of the p-type a-CNTO TFTs and the low-temperature processes may open the door for practical applications in transparent and flexible electronics.

中文翻译：

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在低温下加工的非晶 p 型 CuNiSnO 薄膜晶体管

在本文中，我们开发了一种非晶 CuNiSnO (a-CNTO)，它是一种 p 型非晶氧化物半导体 (AOS)。a-CNTO薄膜通过脉冲激光沉积方法沉积，具有高非晶质量和相当光滑的表面。在 100 °C 生长的 a-CNTO 薄膜表现出最光滑的表面（均方根粗糙度为 0.25 nm）、最高的可见光透明度（~85%）和最有利的 p 型导电性（空穴浓度为~1015 cm−） 3），非常适合电子器件制造。因此，获得的p型a-CNTO薄膜晶体管（TFT）具有$\sim 1.2\times 10^{{5}}$的开-关电流比，-2.3 V的阈值电压，场效应迁移率为 1.37 cm2/Vs，亚阈值摆幅为 0.70 V/decade。作为一种新型的 p 型 AOS，