Rectifier circuits featuring low threshold voltages and high cutoff frequencies based on p-channel organic thin-film transistors (TFTs) have been designed, fabricated and characterized. The TFTs and circuits were fabricated by shadow-mask lithography on flexible plastic substrates using the vacuum-deposited small-molecule organic semiconductor dinaphtho[2,3-b: $2^\prime $ , $3^\prime $ -f]thieno[3,2-b] thiophene (DNTT). The TFTs have a gate dielectric with a thickness of 5.3 nm and a channel length of 10 $\mu \text{m}$ . The study considers the frequency characteristics of diode-connected transistors (transdiodes) and adopts circuit techniques from silicon CMOS technology, namely single-stage and multistage dynamic-threshold-compensated differential rectifiers. The characterization of the rectifier circuits indicates cutoff frequencies up to 4.75 MHz at a peak-to-peak input voltage of 3 V for transdiodes, up to 32 MHz at a peak-to-peak input voltage of 1.5 V for single-stage differential rectifiers and up to 7.5 MHz at a peak-to-peak input voltage of 1.5 V for two-stage rectifiers. The efficiency is 25% for a load of 10 $\text{M}\Omega $ and below 1% for a load of 1 $\text{M}\Omega $ .

中文翻译：

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基于柔性基板上有机薄膜晶体管的高频整流器

已经设计、制造和表征了基于 p 沟道有机薄膜晶体管 (TFT) 的具有低阈值电压和高截止频率的整流器电路。TFT 和电路是使用真空沉积的小分子有机半导体 dinaphtho[2,3-b: $2^\prime $ , $3^\prime $ -f]噻吩并[3,2-b]噻吩（DNTT）。TFT 的栅极电介质厚度为 5.3 nm，沟道长度为 10 $\mu \text{m}$ . 该研究考虑了二极管接法晶体管（transdiodes）的频率特性，采用了来自硅CMOS技术的电路技术，即单级和多级动态阈值补偿差分整流器。整流器电路的特性表明，转换二极管在 3 V 峰峰值输入电压时的截止频率高达 4.75 MHz，单级差分整流器在 1.5 V 峰峰值输入电压时高达 32 MHz对于两级整流器，在 1.5 V 的峰峰值输入电压下高达 7.5 MHz。效率为 25%，负载为 10 $\text{M}\Omega $ 负载为 1 时低于 1% $\text{M}\Omega $ .